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Marking: full part number maximum ratings: ( ta= 25° c unless otherwise noted) symbol units collector- base voltage vcbo 60 v. Silicon npn epitaxial type ( pct process), 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet : toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. 2sc1815 manufactured by: npn silicon epitaxial transistor. Ul flammability classification rating: 94v- 0 weight: 0. ) at vce = 6 v, ic = 150 ma. Complementary to 2sc1815. The 2sc1815 transistor is designed for general- purpose use. 95( typ) ) z low noise. Here are a few potential replacements for the 2sc1815 transistor:. 15a • collector- base voltage 60v • marking : c1815 2sc1815- y npn silicon epitaxial transistor electrical characteristics @ 25oc unless otherwise specified.
Download html 2sc1815 datasheet ( pdf) - toshiba semiconductor description silicon npn epitaxail type ( for audio frequency general purpose amplifier applications) 2sc1815 datasheet ( html) - toshiba semiconductor 2sc1815 product details audio frequency voltage amplifier applications low noise amplifier applications. Datasheet pdf 2sc1815 description the 2sc1815 is a 50v 150ma general purpose npn low- power silicon transistor with a maximum gain value of 700. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Micro electronics. The 2sc1815 is a specific type of npn bipolar junction transistor ( bjt) commonly used in low- power amplifier and switching applications. Audio frequency amplifier high frequency osc npn transistor, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet : utc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. 2sc1815 silicon npn transistor description: the central semiconductor 2sc1815 is a silicon npn transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. , ltd 2sc1815 npn silicon transistor audio frequency amplifier high frequency osc npn transistor features collector- emitter voltage: bvceo= 50v collector current up to 150ma high hfe linearity complimentary to utc 2sa1015 symbol ordering information note: pin assignment: e: emitter c: collector b: base. 2sc1815 features z a high voltage and high current v ceo= 50v( min), i c= 150ma( max). 2sctoshiba transistor silicon npn epitaxial type ( pct process) 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current: vceo = 50 v ( min), ic = 150 ma ( max) • excellent hfe linearity : hfe ( 2) = 100 ( typ. 2sc1815 electrical characteristics( ta= 25° c unless otherwise specified) 2sc1815 packaging description: sot- 23 parts are shipped in tape.
Z excellent h fe linearity : h fe( 2) = 100 ( typ) at v ce= 6v, i c= 150ma h fe( i c= 0. • collector- current 0. Description: the central semiconductor 2sc1815 series are silicon npn transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. The c1815 is a general purpose npn transistor that is commonly used in amplifier applications. Download 2sc1815 datasheet from. 2sc1815 is npn silicon epitaxial transistor designed for rf, af amplifier and general purpose applications. The tube withstand voltage is 40v, pcm= 400mw, icm= 150ma, and it adopts to- 92 package. The 2sc1815 transistor is commonly used in various low- power amplification and switching applications. 2sc1815 transistor ( npn) features power dissipation marking: 2sc1815= hf maximum ratings ( ta= 25° c unless otherwise noted) electrical characteristics ( ta= 25° c unless otherwise specified) sot- 23 base emitter collector classification of hfe dn: t21603a0 typical characteristics vce( sat) / vbe( sat) - ic ft- ic outlitne drawing.
There are four variants, the 2sc1815o will have a gain value of 70 to 140 and the 2sc1815y will have 1020 to 240, the 2sc1815gr will have 200 to 400 and the 2sc1815l will have a gain range from 350 to 700. Audio frequency voltage amplifier applications low noise amplifier applications, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet : toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. Marking: full part number to- 92 case maximum ratings: ( ta= 25° c unless otherwise noted) collector- base voltage collector- emitter voltage emitter- base voltage. Ordering information. Npn silicon transistor, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet : micro- electronics, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. 1ma) / h fe( i c= 2ma= 0. 4watts of power dissipation.
Maximum ratings ( ta 25° c) characteristics symbol rating unit collector- base voltage vcbo 50 v collector- emitter voltage vceo 50 v emitter- base voltage vebo 5 v collector current ic 150 ma base current ib 50 ma collector power dissipation pc 400 mw junction temperature tj 125 ° c storage temperature range tstg 55~ 125 ° c While an exact replacement with the same part number may not be readily available, there are alternative options that can be considered. Here is an image showing the pin diagram of this transistor. The transistor polarity is npn. Excellent hfe linearity low noise surface mount device complementary to 2sa1015 mechanical data case: sot- 23 case material: molded plastic.
Applications sot- 23 z audio frequency general purpose amplifier applications. It is produced by central semiconductor. • capable of 0. Bipolar transistors are semiconductor devices commonly used for amplification and switching applications. 008 grams ( approximate) maximum ratings ( ta = 25° c unless otherwise noted) sot- 23 electrical characteristics ( ta = 25° c unless otherwise specified). The 2sc1815 is manufactured in a plastic to- 92 case. Semiconductor diodes, transistors and thyristors bipolar transistors gp bjt 2sc1815y export bookmark overview datasheet package manufacturing parametric crosses overview familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations. Transistor silicon npn epitaxial type ( pct process) audio frequency general purpose amplifier applications driver stage amplifier applications. Unisonic technologies co. 3 hf 2 c e maximum ratings( ta= 25° c unless otherwise noted) 2sc1815 electrical characteristics( ta= 25° c unless otherwise specified) * pulse test: pulse width< 300us, duty cycle< 2.
The 2sc1815 is a specific model of an npn bipolar junction transistor ( bjt). Z complementary to 2sa1015.
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